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| IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII AC and DC Motor Controls Switching Regulators Inverters Solenoid and Relay Drivers Fast Turn Off Times 800 ns Inductive Fall Time at 25_C (Typ) 2.0 s Inductive Storage Time at 25_C (Typ) * Operating Temperature Range -65 to 200_C Designer's and SWITCHMODE are trademarks of Motorola, Inc. (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode Designer'sTM Data Sheet SEMICONDUCTOR TECHNICAL DATA MOTOROLA * * * * * The BUT33 Darlington transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications such as: THERMAL CHARACTERISTICS MAXIMUM RATINGS REV 7 Maximum Lead Temperature for Soldering Purpose 1/8 from Case for 5 Seconds Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C @ TC = 100_C Derate above 25_C Free Wheel Diode Forward Current -- Continuous Free Wheel Diode Forward Current -- Peak Base Current -- Continuous Base Current -- Peak (1) Collector Current -- Continuous Collector Current -- Peak (1) Emitter Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Characteristic Rating x10%. 100 VCEO(sus) Symbol Symbol TJ, Tstg VCEV RJC VEB IC ICM IB IBM IF IFM PD TL 16 - 65 to + 200 BUT33 Max 275 250 140 600 400 0.7 56 75 12 15 56 75 10 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS BUT33 CASE 197A-05 TO-204AE (TO-3) Order this document by BUT33/D Watts W/_C _C/W Unit Unit Adc Adc Adc Vdc Vdc Vdc _C _C 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I II I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I III I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I IIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 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IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII BUT33 (1) Pulse Test: PW = 300 s, Duty Cycle SWITCHING CHARACTERISTICS Inductive Load Clamped (Table 1) ON CHARACTERISTICS (1) SECOND BREAKDOWN OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Fall Time Storage Time Fall Time Storage Time Diode Forward Voltage (IF = 44 A) Base-Emitter Saturation Voltage (IC = 20 A, IB = 1 A) (IC = 36 A, IB = 3.6 A) (IC = 44 A, IB = 4.4 A) Collector-Emitter Saturation Voltage (IC = 20 A, IB = 1 A) (IC = 36 A, IB = 3.6 A) (IC = 44 A, IB = 4.4 A) (IC = 56 A, IB = 11.2 A) DC Current Gain (IC = 20 A, VCE = 5 V) (IC = 36 A, VCE = 5 V) Clamped Inductive SOA with Base Reverse Biased Second Breakdown Collector Current with base forward biased Emitter Cutoff Current (VEB = 20 V, IC = 0) Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc) (VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C) Collector-Emitter Sustaining Voltage (Table 1) (IC = 100 mA, IB = 0) 2 TC = 100_C TC = 25_C Characteristic x See Table 1 2%. VBE(off) = 5 V IB = 3.6 A IC = 36 A VCEO(sus) VCE(sat) VBE(sat) Symbol RBSOA Motorola Bipolar Power Transistor Device Data IEBO ICEV hFE IS/b Vf ts ts tf tf Min 400 30 20 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ 0.8 2.2 0.8 2.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- See Figure 17 See Figure 16 Max 350 1.6 3.3 4.0 2.5 2.9 3.3 2.0 2.5 3.0 5.0 0.2 4.0 -- -- -- -- -- mAdc mAdc Unit Vdc Vdc Vdc Vdc s s s s BUT33 TYPICAL CHARACTERISTICS VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 400 200 hFE , DC CURRENT GAIN 100 50 30 20 10 5 3 2 1 1 TC = 25C VCE = 5.0 V 2 34 6 10 20 IC, COLLECTOR CURRENT (AMPS) 30 40 60 4 3 IC = 40 A 2 IC = 20 A 1 TC = 25C 0 0.1 0.2 0.3 23 0.5 1 IB, BASE CURRENT (AMPS) 5 7 10 Figure 1. DC Current Gain Figure 2. Collector Saturation Region VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.5 2.2 1.9 1.6 1.3 1.0 0.7 0.4 1 TC = 25C IC/IB = 10 VBE, BASE-EMITTER VOLTAGE (VOLTS) 3.2 2.8 2.5 2.2 1.9 1.6 1.3 1.0 1 TC = 25C IC/IB = 10 2 3 5 7 10 20 30 50 2 3 5 7 10 20 30 50 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Voltage r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 D = 0.5 0.2 0.1 P(pk) 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.02 0.01 SINGLE PULSE RJC(t) = r(t) RJC RJC(t) = 1.17C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.1 0.2 0.3 0.5 1 23 5 t, TIME (ms) 10 20 30 50 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 t1 0.02 0.03 0.05 Figure 5. Thermal Response Motorola Bipolar Power Transistor Device Data 3 BUT33 Table 1. Test Conditions for Dynamic Performance VCEO(sus) 20 RBSOA AND INDUCTIVE SWITCHING +10 V 2N6438 MR854 1 220 100 INPUT CONDITIONS 33 2W MM3735 D1 160 22 F D3 TEST CIRCUIT for FREE-WHEEL DIODE + 5V 0 2 PULSES = 3% 680 pF 22 Ib1 ADJUST 1 F D4 Ib2 ADJUST dTb ADJUST dT MR854 DRIVER VD D1 D2 D3 D4 1N4934 680 pF 2N3763 680 pF Lcoil = 180 H Rcoil = 0.05 VCC = 10 V 100 33 2W 160 D3 22 F PW Varied to Attain IC = 100 mA 22 ID - CIRCUIT VALUES 2N6339 VCC Lcoil = 10 mH, VCC = 10 V Rcoil = 0.7 Vclamp = VCEO(sus) INDUCTIVE TEST CIRCUIT OUTPUT WAVEFORMS IC Rcoil ICM t1 VCE tf AV up to 50 V t1 Adjusted to Obtain IC t1 (I [ LcoilCCCM) V CRONETICS PG130 up to 50 V 5 s 1% VD TEST CIRCUITS TUT 1 INPUT SEE ABOVE FOR DETAILED CONDITIONS 2 1N4937 OR EQUIVALENT Vclamp RS = 0.1 tf Clamped t Lcoil VCC 510 VCEM TIME t2 t2 Vclamp t [ Lcoil (ICM) Vclamp ID Test Equipment Scope -- Tektronix 475 or Equivalent 15 10 5 t, TIME ( s) 3 2 1 40C 0.5 0.3 0.2 0.1 IC = 25 A TC = 25C IC/IB = 5 5 4 3 2 t, TIME ( s) 1 tF = 200 ns IC = 20 A t = 400 ns S TC = 25C IC/IB = 20 tS 10 V IC = 50 A VBE(off) = 5 V 0.5 0.3 0.2 0.1 VBE(off) = 5 V 10 V tF 1 2 3 5 7 10 20 IC, COLLECTOR CURRENT (AMPS) 30 50 IC/IB = 10 1 2 3 4 5 Ib2/Ib1 6 7 8 9 10 Figure 6. Fall Time versus IB2/IB1 10 8 IC = 25 A 6 t, TIME ( s) t, TIME ( s) 5 4 3 2 1 TC = 25C VBE(off) = 5 V 1 2 3 4 5 6 7 8 9 10 IC = 50 A 6 5 4 3 2 1 10 8 Figure 7. Turn-Off Time versus IC TC = 25C IC/IB = 5 IC = 25 A IC = 50 A IC = 10 A 1 2 3 4 5 Ib2/Ib1 6 7 8 9 10 f, FORCED GAIN Figure 8. Storage Time versus Forced Gain Figure 9. Storage Time versus Ib2/Ib1 4 Motorola Bipolar Power Transistor Device Data BUT33 FREE-WHEEL DIODE CHARACTERISTICS 50 I IFM Id IRM 1 0 VD trr DYN 10 (VDYN VFM) VFM TFR 0 0 1 2 3 4 VEC, EMITTER COLLECTOR VOLTAGE (VOLTS) 5 di/dt = 25 A/s IE , EMITTER CURRENT (AMPS) 25 IRM t 40 - + 30 20 10 TC = 25C Figure 10. Free Wheel Diode Measurements I RM , PEAK REVERSE RECOVERY CURRENT (AMPS) Figure 11. Forward Voltage Vdyn , FORWARD MODULATION VOLTAGE (VOLTS) 30 25 20 15 10 5 0 TC = 25C 50 TC = 25C 40 30 20 10 40C 0 10 20 30 IE, EMITTER CURRENT (AMPS) 40 50 0 0 10 20 30 IE, EMITTER CURREMT (AMPS) 40 50 Figure 12. Forward Modulation Voltage Figure 13. Peak Reverse Recovery Current 15 TFR , FORWARD RECOVERY TIME ( s) TRR, REVERSE RECOVERY TIME ( s) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 IE, EMITTER CURRENT (AMPS) 40 50 TC = 25C 10 7 5 3 2 1 0.7 0.5 0.3 0 10 20 30 IE, EMITTER CURRENT (AMPS) 40 50 TC = 25C Figure 14. Forward Recovery Time Figure 15. Reverse Recovery Time Motorola Bipolar Power Transistor Device Data 5 BUT33 The Safe Operating Area figures shown in Figures 16 and 17 are specified for the devices under the test conditiond shown. 60 IC, COLLECTOR CURRENT (AMPS) 30 10 DC 100 s 1 ms SAFE OPERATING AREA INFORMATION FORWARD BIAS 10 s 3.0 1.0 0.5 0.3 TC = 25C 0.1 1 300 5 10 30 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 Figure 16. Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subject to greater dissipation than the curves indicate. The data of Figure 16 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 16 may be found at any case temperature by using the appropriate curve on Figure 18. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. y REVERSE BIAS ICM , PEAK COLLECTOR CURRENT (AMPS) 60 40 20 TC = 25C IC/IB = 10 0 VBE(off) = 5 V For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage current condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode Figure 17 gives the RBSOA characteristics. 0 200 400 600 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 17. Reverse Bias Safe Operating Area 100 POWER DERATING (FACTOR) 80 SECOND BREAKDOWN DERATING 60 THERMAL DERATING 40 20 0 0 40 80 120 IC, CASE TEMPERATURE (C) 160 200 Figure 18. Power Derating 6 Motorola Bipolar Power Transistor Device Data BUT33 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. K M 0.30 (0.012) L G 1 TQ M Y M -Y- H B -Q- 0.25 (0.010) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 197A-05 TO-204AE (TO-3) ISSUE J Motorola Bipolar Power Transistor Device Data 7 BUT33 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 8 Motorola Bipolar Power Transistor Device Data *BUT33/D* BUT33/D |
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